EN For medium to high voltage MOSFETs and IGBTs
EN For medium to high voltage MOSFETs and IGBTs
KO 중간 전압에서 고전압까지의 MOSFET와 IGBT용 패키지
Transliterasie jung-gan jeon-ab-eseo gojeon-abkkajiui MOSFETwa IGBTyong paekiji
EN HSON8 features an exposed die pad to enhance thermal performance. The HSON8 is suitable for medium-power applications (reference values 80W*/60A), designed for low on-resistance and high-speed switching MOSFETs.
KO HSON8는 다이 어태치 패드가 노출되어 있어 발열 성능이 뛰어납니다. HSON8는 낮은 온-저항과 고속 스위칭 MOSFET용으로 설계된 중전력 애플리케이션(기준치 80W*/60A)에 적합합니다.
Transliterasie HSON8neun dai eotaechi paedeuga nochuldoeeo iss-eo bal-yeol seongneung-i ttwieonabnida. HSON8neun naj-eun on-jeohang-gwa gosog seuwiching MOSFETyong-eulo seolgyedoen jungjeonlyeog aepeullikeisyeon(gijunchi 80W*/60A)e jeoghabhabnida.
EN The LFPAK56–SINGLE is designed for low on-resistance and high-speed switching MOSFETs such as motor drivers, power supply circuits, DC-DC converters and key applications for automotive in body, safety, and lighting.
KO LFPAK56-SINGLE은 모터 드라이버, 전원 공급 회로, DC-DC 컨버터, 차체, 안전, 조명 등 주요 차량용 애플리케이션과 같은 저저항 및 고속 스위칭 MOSFET을 위해 설계되었습니다.
Transliterasie LFPAK56-SINGLEeun moteo deulaibeo, jeon-won gong-geub hoelo, DC-DC keonbeoteo, chache, anjeon, jomyeong deung juyo chalyang-yong aepeullikeisyeongwa gat-eun jeojeohang mich gosog seuwiching MOSFETeul wihae seolgyedoeeossseubnida.
EN PowerCSP™ is suitable for power applications, designed for low on-resistance and high-speed-switching MOSFETs such as:
KO PowerCSP™는 다음과 같은 낮은 온-저항 및 고속 스위칭 MOSFET을 위해 설계된 전력 응용제품에 적합합니다.
Transliterasie PowerCSP™neun da-eumgwa gat-eun naj-eun on-jeohang mich gosog seuwiching MOSFETeul wihae seolgyedoen jeonlyeog eung-yongjepum-e jeoghabhabnida.
EN Power packaging for medium power applications, designed for low on-resistance and high-speed switching MOSFETs
KO 낮은 온-저항과 고속 스위칭 MOSFET용으로 설계된 중전력 애플리케이션에 적합한 전력 패키지입니다.
Transliterasie naj-eun on-jeohang-gwa gosog seuwiching MOSFETyong-eulo seolgyedoen jungjeonlyeog aepeullikeisyeon-e jeoghabhan jeonlyeog paekijiibnida.
EN With both 2 and 3 lead versions available, this package is suitable for both high-efficiency diodes as well as transistors such as Schottky Barrier Diodes (SBD), rectifier and Zener diodes, Transient Voltage Suppressors (TVS) and MOSFETs
KO 2개 및 3개의 lead 버전이 모두 제공되는 이 패키지는 SBD (Schottky Barrier Diode), rectifier 및 Zener diode, TVS (Transient Voltage Suppressor) 및 MOSFET와 같은 트랜지스터는 물론 고효율 diode에도 적합합니다
Transliterasie 2gae mich 3gaeui lead beojeon-i modu jegongdoeneun i paekijineun SBD (Schottky Barrier Diode), rectifier mich Zener diode, TVS (Transient Voltage Suppressor) mich MOSFETwa gat-eun teulaenjiseuteoneun mullon gohyoyul diodeedo jeoghabhabnida
EN SO8-FL is suitable for medium power applications, designed for low on-resistance and high-speed-switching MOSFETs including battery protection circuits, PCs, portable electronic devices and DC-DC converters
KO SO8-FL 패키지는 배터리 보호 회로, 컴퓨팅, 휴대용 전자기기 및 DC-DC 컨버터를 포함한 저저항 및 고속 스위칭 MOSFET용으로 설계된 중전력 애플리케이션에 적합합니다
Transliterasie SO8-FL paekijineun baeteoli boho hoelo, keompyuting, hyudaeyong jeonjagigi mich DC-DC keonbeoteoleul pohamhan jeojeohang mich gosog seuwiching MOSFETyong-eulo seolgyedoen jungjeonlyeog aepeullikeisyeon-e jeoghabhabnida
EN Amkor’s TO-220FP package is suitable for medium to high voltage MOSFETs and IGBTs used for switching power supplies, AC adapters, motor drivers and flat panel displays
KO 앰코의 TO-220FP 패키지는 스위칭 전원 공급 장치, AC 어댑터, 모터 드라이버 및 평면 디스플레이에 사용되는 중고전압 MOSFET 및 IGBT에 적합합니다
Transliterasie aemkoui TO-220FP paekijineun seuwiching jeon-won gong-geub jangchi, AC eodaebteo, moteo deulaibeo mich pyeongmyeon diseupeulleie sayongdoeneun jung-gojeon-ab MOSFET mich IGBTe jeoghabhabnida
EN Common power devices include Schotty or PIN diodes, thyristors, MOSFETs, and IGBTs.
KO 일반적인 전력 장치에는 Schotty 또는 PIN 다이오드, 사이리스터, MOSFET 및 IGBT가 포함됩니다.
Transliterasie ilbanjeog-in jeonlyeog jangchieneun Schotty ttoneun PIN daiodeu, sailiseuteo, MOSFET mich IGBTga pohamdoebnida.
Wys 9 van 9 vertalings